型号 NE5230DR2G
厂商 ON Semiconductor
描述 IC OPAMP LOW VOLTAGE 8-SOIC
NE5230DR2G PDF
代理商 NE5230DR2G
标准包装 2,500
放大器类型 通用
电路数 1
输出类型 满摆幅
转换速率 0.25 V/µs
增益带宽积 600kHz
电流 - 输入偏压 40nA
电压 - 输入偏移 400µV
电流 - 电源 1.1mA
电流 - 输出 / 通道 32mA
电压 - 电源,单路/双路(±) 1.8 V ~ 15 V,±0.9 V ~ 7.5 V
工作温度 0°C ~ 70°C
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 带卷 (TR)
其它名称 NE5230DR2G-ND
NE5230DR2GOSTR
同类型PDF
NE5230NG ON Semiconductor IC OPAMP LOW VOLTAGE 8-DIP
NE5232D/01,112 NXP Semiconductors IC OP AMP DUAL HP 8-SOIC
NE5232D/01,118 NXP Semiconductors IC OP AMP DUAL HP 8-SOIC
NE5232N/01,112 NXP Semiconductors IC OP AMP DUAL HP 8-DIP
NE5234D,518 NXP Semiconductors IC OPAMP MATCHED QUAD HP 14-SOIC
NE5234D,518 NXP Semiconductors IC OPAMP MATCHED QUAD HP 14-SOIC
NE5234D/01,512 NXP Semiconductors IC OPAMP MATCHED QUAD HP 14-SOIC
NE5234D/01,518 NXP Semiconductors IC OPAMP MATCHED QUAD HP 14SOIC
NE5234N/01,112 NXP Semiconductors IC OPAMP MATCHED QUAD HP 14DIP
NE52418-A CEL IC AMP HBT GAAS LN 4-SMINI
NE52418-EVNF58 CEL EVAL BOARD FOR NE52418
NE52418-T1-A CEL IC AMP HBT GAAS LN 4-SMINI
NE5500234-AZ CEL MOSFET LD N-CH 4.8V 400MA SOT89
NE5500234-T1-AZ CEL MOSFET LD N-CH 4.8V 400MA SOT89
NE5511279A-A CEL MOSFET LD N-CHAN 7.5V 79A
NE5511279A-T1-A CEL MOSFET LD N-CHAN 7.5V 79A
NE5511279A-T1-A CEL MOSFET LD N-CHAN 7.5V 79A
NE5511279A-T1-A CEL MOSFET LD N-CHAN 7.5V 79A
NE5517AN ON Semiconductor IC AMP XCONDUCTANCE DUAL 16-DIP
NE5517ANG ON Semiconductor IC AMP XCONDUCTANCE DUAL 16-DIP